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october 1992 general purpose amplifier applications rf & microwave transistors .250 2lfl (s010) hermetically sealed . emitter ballasted . vswr capability :1 @ rated conditions . refractory/gold metallization . hermetic stripac a package . p out = 3.0 w min. with 7.8 db gain @ 2.0 ghz description the MSC82003 is a common base hermetically sealed silicon npn microwave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. this device is capable of withstanding an infinite load vswr at any phase angle under rated rated conditions. the MSC82003 was designed for class c amplifier applications in the 1.0 - 2.0 ghz frequency range. pin connection branding 82003 order code MSC82003 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* 21.8 w i c device current* 600 ma v cc collector-supply voltage* 35 v t j junction temperature 200 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 8.0 c/w *applies only to rated rf amplifier operation MSC82003 1. collector 3. emitter 2. base 4. base thermal data 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 2.0 ghz p in = 0.5 w v cc = 28 v 3.0 3.3 w h cf = 2.0 ghz p in = 0.5 w v cc = 28 v 35 37 % g p f = 2.0 ghz p in = 0.5 w v cc = 28 v 7.8 8.2 db c ob f = 1 mhz v cb = 28 v 6.5 pf static symbol test conditions value unit min. typ. max. bv cbo i c = 1ma i e = 0ma 45 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 5ma r be = 10 w 45 v i cbo v cb = 28v 1.0 ma h fe v ce = 5v i c = 200ma 15 120 dynamic typical performance power output vs frequency collector efficiency vs frequency relative power output vs collector voltage MSC82003 2/5
typical input impedance typical collector load impedance p in = 0.5 w v cc = 28 v normalized to 50 ohms p out = saturated v cc = 28 v normalized to 50 ohms impedance data z in z cl freq. z in ( w )z cl ( w ) 1.0 ghz 4.4 + j 5.5 9.6 + j 16.0 1.5 ghz 4.5 + j 9.0 4.3 + j 7.0 1.7 ghz 4.5 + j 10.5 3.5 + j 4.0 2.0 ghz 4.6 + j 12.5 3.0 + j 1.0 MSC82003 3/5
package mechanical data ref.: dwg. no. c125518 all dimensions are in inches. frequency 2.0 ghz rf amplifier power output test test circuit MSC82003 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a MSC82003 5/5

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